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1 n- and p-channel 30 v (d-s) mosfet features ? halogen-free ? t re nchfet ? power mosfet ? 100 % r g tested ? 100 % uis tested applications ? backlig ht inverter for lcd display ? full bridge converter product su m mary v ds (v) r ds(on) ( ) i d (a) a q g (typ. ) n-channel 30 0.0355 at v gs = 10 v 6.8 5.3 0 .0425 at v gs = 4. 5 v 6.2 p-chan nel - 30 0.045 at v gs = - 10 v - 5 . 8 11.8 0.062 at v gs = - 4.5 v - 5 .0 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top v i ew 2 3 4 1 n-channel mosfet d 1 g 1 s 1 s 2 g 2 d 2 p-channel mosfet notes: a. based on t c = 2 5 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 120 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted pa ramet er symbol n-channel p-channel unit drain-source voltage v ds 30 - 30 v gat e -source voltage v gs 20 contin uous d rain current (t j = 150 c ) t c = 25 c i d 6.8 - 5.8 a t c = 70 c 5.4 - 4.7 t a = 25 c 5.6 b, c - 4.7 b, c t a = 70 c 4.4 b, c - 3.7 b, c pulsed dra i n current i dm 20 - 20 source-drain c urre nt diode current t c = 25 c i s 2.5 - 2.5 t a = 25 c 1.6 b, c - 1.6 b, c pulsed source-dra in current i sm 20 - 20 single pulse a v alanche current l = 0 1 mh i as 7- 1 0 single pulse a v alanche energy e as 2.45 5 m j max imum power dissipation t c = 25 c p d 3.0 3.1 w t c = 70 c 1.9 2 t a = 25 c 2.0 b, c 2.0 b, c t a = 70 c 1.25 b, c 1.25 b, c oper ating junction and storage temperature range t j , t stg - 55 to 15 0 c thermal resist ance rat ings pa rameter symbol n- channel p-channel unit typ. max. typ. max. maximum junction-to-ambient b, d t 10 s r thj a 54 64 49 62.5 c/w maximum junction-to-foot (drain) steady state r thjf 33 42 30 40 rohs compliant dt . www. daysemi.jp
2 specif ications t j = 25 c, unless otherwise noted p a rameter symbol test conditions min. typ. a max. u nit static drain-source breakdo wn voltage v ds v gs = 0 v , i d = 250 a n- ch 30 v v gs = 0 v , i d = - 250 a p-ch - 30 v ds t emper ature coefficient v ds /t j i d = 250 a n- ch 44 mv/c i d = - 250 a p-ch - 42 v gs( t h) t emper ature coefficient v gs( t h) /t j i d = 250 a n- ch - 5.5 ii d = - 2 50 a p-ch 4.6 gate t hreshold voltage v gs( t h) v ds = v gs , i d = 2 50 a n-ch 1.4 3.0 v v ds = v gs , i d = - 250 a p-ch - 1.2 - 2.5 gate-body leakage i gss v ds = 0 v , v gs = 20 v n- ch 100 na p-ch - 100 z ero gate voltage drain current i dss v ds = 30 v , v gs = 0 v n- ch 1 a v ds = - 30 v , v gs = 0 v p-ch - 1 v ds = 3 0 v, v gs = 0 v, t j = 55 c n-ch 10 v ds = - 30 v , v gs = 0 v , t j = 55 c p-ch - 10 on-state drain current b i d( on ) v ds = 5 v , v gs = 10 v n- ch 10 a v ds = - 5 v , v gs = - 10 v p-ch - 10 drain-source on-state resistance b r ds( o n) v gs = 10 v , i d = 5 a n-ch 0.0295 0.0355 v gs = - 10 v , i d = - 5 a p-ch 0.037 0.045 v gs = 4.5 v , i d = 4 a n-ch 0.0355 0.0425 v gs = - 4.5 v , i d = - 4 a p-ch 0.050 0.062 forward transconductance b g fs v ds = 15 v , i d = 5 a n- ch 22 s v ds = - 15 v , i d = - 5 a p-ch 14 dy nam ic a inpu t capacita nce c iss n - channel v ds = 20 v , v gs = 0 v , f = 1 mhz p-channel v ds = - 20 v , v gs = 0 v , f = 1 mhz n-ch 640 pf p-ch 970 output capacitance c oss n- ch 73 p-ch 120 re verse transfer capacitance c rs s n- ch 41 p-ch 95 t otal gate charge q g v ds = 20 v , v gs = 10 v , i d = 5 a n- ch 11.7 20 nc v ds = - 20 v, v gs = - 10 v , i d = - 5 a p-ch 25 38 n-channel v ds = 20 v, v gs = 4. 5 v i d = 5 a p-channel v ds = - 20 v , v gs = - 4.5 v, i d = - 5 a n- ch 5.3 9 p-ch 11.8 18 gate-source charge q gs n- ch 1.9 p-ch 3.0 gate- drain charge q gd n- ch 1.7 p-ch 5.2 g ate resistance r g f = 1 mhz n- ch 0.5 2.2 4.5 p-ch 1.0 5.5 11 dt. www. daysemi.jp
3 notes: a. guaranteed by design, n ot subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. st resses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications t j = 25 c, unless otherwise noted p a rameter symbol test conditions min. typ. a max. u nit dyn a mic a tu r n - o n d e l ay t i m e t d( on) n-channel v dd = 20 v, r l = 4 i d ? 5 a, v gen = 10 v , r g = 1 p-chan nel v dd = - 20 v , r l = 4 i d ? - 5 a, v gen = - 10 v , r g = 1 n-c h 7 14 ns p-ch 7 14 rise time t r n-c h 10 20 p-ch 12 24 turn-off delay time t d( off) n-c h 15 30 p-ch 30 60 fall time t f n-c h 9 18 p-ch 9 18 tu r n - o n d e l ay t i m e t d( on) n-channel v dd = 20 v , r l = 4 i d ? 5 a, v ge n = 4. 5 v , r g = 1 p-chan nel v dd = - 20 v , r l = 4 i d ? - 5 a, v ge n = - 4.5 v , r g = 1 n-c h 16 30 p-ch 44 80 rise time t r n-c h 17 30 p-ch 33 50 turn-off delay time t d( off) n-c h 16 30 p-ch 28 60 fall time t f n-c h 10 20 p-ch 13 25 drain - source body diode characteristics continuous source-drain diode current i s t c = 25 c n-c h 2.5 a p-ch - 2.5 pulse diode forward current a i sm n-c h 20 p-ch - 20 body dio de voltage v sd i s = 1.6 a n-ch 0.7 8 1.2 v i s = - 1.6 a p-ch - 0.76 - 1.2 body diode reverse recovery time t rr n-channel i f = 2 a, di/dt = 100 a/s, t j = 25 c p-channel i f = - 2 a, di/dt = - 100 a/s, t j = 25 c n-c h 19 30 ns p-ch 26 50 body diode reverse recovery charge q rr n-c h 14 25 nc p-ch 18.5 35 reverse recovery fall time t a n-ch 13 ns p-ch 12 .5 reverse recovery rise time t b n-c h 6 p-ch 13 .5 dt. www. daysemi.jp
4 n-c han nel typical characteristics 25 c, unless otherwise noted ou tpu t characteristics on-resistance vs. drain current gate charge 0 6 12 18 24 30 0.0 0 .5 1.0 1.5 2.0 2.5 v ds - drain-to-source voltage (v) - drain current (a) i d v gs =1 0t hr u 5 v 3 v 4 v 0.020 0.028 0.036 0.044 0.052 0.060 06 1 21 8 24 30 - on-resistance () r ds (o n) i d - drain current (a) v gs =4 . 5 v v gs =1 0 v 0 2 4 6 8 10 0.0 2 .5 5.0 7.5 10.0 12.5 i d =5a - gate-to-source voltage (v) q g - total gate charge (nc) v gs v ds =1 0 v v ds =2 0 v v ds =3 0 v tran sfer ch aracteristics capacitance on-resistance vs. junction temperature 0 1 2 3 4 5 01 2 345 v gs - gate-to-source voltage (v) - drain current (a) i d t c =2 5 c t c = - 55 c t c = 125 c c rss 0 160 320 480 640 800 0 6 12 1 8 24 30 c oss c is s v ds - drain-to-source voltage (v) c - capacitance (pf) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 t j - junction temperature (c) (normalized) - on-resistance r ds(o n) i d =5a v gs =1 0 v v gs =4 . 5 v dt. daysemi.jp
5 n - channel typical characteristics 25 c, unless otherwise noted source- drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 v sd - source-to-drain voltage (v) - source current (a) i s 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ariance ( v) v gs( th) t j - temperature (c) i d =5m a on-res istance vs. gate-to-source voltage single pulse power, junction-to-ambient 0 0.04 0.08 0.12 0.16 0.20 0 246 8 10 - on-resistance () r ds(on) v gs - gate-to-source voltage (v) t a = 25 c t a = 125 c i d =5a 0 32 48 64 80 01 1 100. 00 . 0 1 t ime (s) pow er ( w ) 0.1 16 s a fe operating area, junction-to-ambient v ds - drain-to-source voltage (v) * v gs > minim u m v gs at which r ds (on) is specified 100 1 0.1 1 10 100 0.01 10 1m s - drain current (a) i d 0.1 t a = 25 c single pulse dc 1s 10 s limited byr ds (on) * 10 ms 100 ms dt. daysemi.jp
6 n-c han nel typical characteristics 25 c, unless otherwise noted * the power dissipation p d is b ased on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 2 5 6 8 0 25 50 75 100 125 150 t c - case temperature (c) i d - drain current (a) 4 po w er derating, junction-to-foot 0 0.8 1.6 2.4 3.2 4.0 0 25 50 75 100 125 150 t c - case temperature (c) pow er (w) po we r derating, junction-to-ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 t a -a m b ient temperat u re (c) pow er (w) dt. www. daysemi.jp
7 n - channel typical characteristics 25 c, unless otherwise noted n o rmalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 0.02 square w avep u lse d u ration (s) normalized ef fectiv e transient thermal impedance 1 0.1 0.01 single p ulse t 1 t 2 notes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =12 0 c/ w 3. t jm - t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u t y cycle = 0.5 nor malized thermal transient impedance, junction-to-foot 10 -3 10 -2 01 1 10 -1 10 -4 0.2 0.1 d u ty c ycle = 0.5 square w avep u lse du ration (s) normalized ef fectiv e transient thermal impedance 1 0.1 0.01 0.05 0.02 single p ulse dt. www. daysemi.jp
8 p- ch annel typical characteristics 25 c, unless otherwise noted outpu t characteristics on-resistance vs. drain current gate charge 0 6 12 18 24 30 0.0 0 .5 1.0 1.5 2.0 2.5 v gs =1 0t hr u 5 v v gs =4v v gs =3v v ds - drain -to-so urce v oltage ( v) - drain c u rrent (a) i d 0.00 0.02 0.04 0.06 0.08 0.10 0 6 12 1 8 24 30 v gs =4 . 5 v v gs =1 0 v - on - resistance ( ) r ds( on) i d - drain c u rrent (a) 0 2 4 6 8 10 0.0 5.1 10.2 15.3 20.4 25.5 v ds =3 0 v i d =5a v ds =1 0 v v ds =20 v - gate- to-so urce v oltage ( v ) q g - t otal gate charge (nc) v gs t r ansfer characteristics capacitance on-resistance vs. junction temperature 0 1 2 3 4 5 01 2 345 t c = 25 c t c = 125 c t c = - 55 c v gs - g ate-to-so urce v oltage ( v ) - drain c u rrent (a) i d c rss 0 320 640 960 1280 1600 0.0 2.4 4.8 7.2 9.6 12.0 c iss c oss v ds - drain -to-so urce v oltage ( v) c - capacitance (pf) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 i d =5a v gs =4. 5 v v gs =1 0 v t j -j unction t emperatu re (c) (normalized) - on - resistance r ds( on) dt. daysemi.jp
9 p-channe l typical characteristics 25 c, unless otherwise noted so urce- drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 150 c t j = 25 c v sd -so u rce-to-drain v oltage ( v) - source c u rrent (a) i s - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a i d =1 m a v ariance ( v) v gs( t h) t j - t emperatu re (c) on -res istance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.04 0.08 0.12 0.16 0.20 012 345 67 8 910 t j = 25 c t j = 125 c i d =5a - on - resistance ( ) r ds( on) v gs - g ate-to-so urce v oltage ( v ) 0 10 20 30 40 50 01 1 100. 00 . 0 1 0.1 time (s) pow er ( w ) s a fe operating area, junction-to-ambient 100 1 001 01 1 10.0 0.01 10 0.1 0.1 1ms t c = 2 5 c single p u lse 10 ms 100 ms dc 1s limi ted b yr ds ( on) * 10 s v ds - drain -to-so urce v oltage ( v) * v gs > minim u m v gs at w hich r ds (on) is specified - drain c u rrent (a) i d dt. daysemi.jp
10 p- ch annel typical characteristics 25 c, unless otherwise noted * the power dissipation p d is b ased on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0.0 1.4 2.8 4.2 5.6 7.0 0 2 55075100125150 t c - case temperat u re (c) i d - drain c u rrent (a) po w er derating, junction-to-foot 0.0 0.8 1.6 2.4 3.2 4.0 0 25 50 75 100 125 150 t c - case temperat u re (c) pow er ( w ) po we r derating, junction-to-ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 2 55075100125150 t a -a m b ient temperat u re (c) pow er ( w ) dt. www. daysemi.jp
11 p-channe l typical characteristics 25 c, unless otherwise noted n o rmalized thermal transient impedance, junction-to-ambient 0.2 0.1 0.05 0.02 sing le p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thj a =12 0 c/ w 3. t jm -t a =p dm z thj a (t) t 1 t 2 4. s u rf ace mo u nted du ty cy cle = 0.5 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 square w avep ulse d u ration (s) n ormalized ef fectiv e transient thermal impedance 0.1 0.01 1 nor malized thermal transient impedance, junction-to-foot 10 -3 10 -2 01 1 10 -1 10 -4 0.2 0.1 0.05 0.02 sin g le p u lse du ty cy cle = 0.5 sq u are w a v ep u lse d u ration (s) n or mal ized effecti v e transient thermal impedance 1 0.1 0.01 dt. www. daysemi.jp
www.daysemi.jp 1 di m millimeter s inc hes min ma x min max a 1 .35 1.75 0.053 0.069 a 1 0 .10 0.20 0.00 4 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0 8 0 8 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all lea d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (ga ge pla ne) soic (narrow): 8-lead jedec p a rt n u m b er: ms -012 s package information
www .daysemi.jp 1 appl ication note r ecommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) return to index re tu rn to index application note
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